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| RB441Q-40 Diodes Schottky barrier diode RB441Q-40 !Applications Low current rectification !External dimensions (Units : mm) CATHODE BAND (BLACK) !Features 1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF.(VF=0.45V Typ. at 100mA) 0.40.1 C 291 2.70.3 291 A 1.80.2 !Construction Silicon epitaxial planar ROHM : MSD EIAJ : - JEDEC : DO-34 Product identification number "S3" is stamped on body of main unit. !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 0.1 1 125 -40~+125 Unit V V A A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR CT Min. - - - - Typ. - - - 6.0 Max. 0.34 0.55 100 - Unit V V A pF IF=10mA IF=100mA VR=40V VR=10V, f=1MHz Conditions Note) ESD sensitve product handling required. RB441Q-40 Diodes !Electrical characteristic curves (Ta = 25C) 1 Typ. pulse measurement 10m CAPACITANCE BETWEEN TERMINALS : CT (pF) Typ. pulse measurement Ta=125C 1000 FORWARD CURRENT : IF (A) 100m REVERSE CURRENT : IR (A) 1m 100 10m Ta =1 75 25C C 25 -2 C 5C 100 75C 1m 10 25C 10 100 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 40 1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics FORWARD SURGE CURRENT : IF Surge (A) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0.5 POWER DISSIPATION : PF (W) 0.4 Io CURRENT (%) Sine wave (Tj=25C) DC (Tj=25C) 100 80 60 40 20 0 0 0.3 0.2 P=50% 0.1 1 10 100 1000 0 0.5 AVERAGE FORWARD CURRENT : IO (A) 25 50 75 100 125 PULSE WIDTH (mS) AMBIENT TEMPERATURE : Ta (C) Fig. 4 Forward surge current characteristics Fig. 5 Mean rectifying current characteristics Fig. 6 Derating curve (mounting on glass epoxy PCBs) |
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